Evidence for weak-antilocalization–weak-localization crossover and metal-insulator transition in CaCu<sub>3</sub>Ru<sub>4</sub>O<sub>12</sub> thin films

نویسندگان

چکیده

Artificial confinement of electrons by tailoring the layer thickness has turned out to be a powerful tool harness control over competing phases in nano-layers complex oxides. We investigate effect dimensionality on transport properties $d$-electron based heavy-fermion metal CaCu$_{3}$Ru$_{4}$O$_{12}$. Transport behavior evolves from metallic localized regime upon reducing and insulator transition is observed below 3 nm film for which sheet resistance crosses $h/e^{2} \sim 25~$k$\Omega$, quantum 2D. Magnetotransport study reveals strong interplay between inelastic spin-orbit scattering lengths thickness, results weak antilocalization (WAL) localization (WL) crossover magnetoconductance.

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ژورنال

عنوان ژورنال: EPL

سال: 2021

ISSN: ['0295-5075', '1286-4854']

DOI: https://doi.org/10.1209/0295-5075/133/17005